Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF)
US5539248A · kind A · utility
2Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Nov 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with an improved insulating and passivating layer including the steps of providing a gallium arsenide substrate with a surface, and crystallographically lattice matching an insulating and passivating layer of indium gallium fluoride on the surface of the gallium arsenide substrate. In one embodiment the semiconductor device is a FET and the layer of indium gallium fluoride covers at least an inter-channel area surrounding the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.