Zone-melting recrystallization of semiconductor materials
US5540183A · kind A · utility
0Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1994 |
| Grant date | Jul 30, 1996 |
| Priority date | — |
| Expiry date | Mar 15, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for zone-melting recrystallization of semiconductor films on semiconductor substrates includes a heater disposed opposite the front surface of a semiconductor substrate and moving across the semiconductor substrate at a uniform rate. The heater may be a strip heating element covered with an insulating and refractory material radiating less heat than the strip heating element. Since heat emitted from surfaces of the heating element except the surface opposite the substrate is intercepted by the insulating and refractory film, the width of the molten zone produced in the semiconductor film is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.