Resistive memory element
US5541869A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1994 |
| Grant date | Jul 30, 1996 |
| Priority date | — |
| Expiry date | Sep 19, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The resistance of a resistive memory element, e.g. a synaptic element is programmed, e.g. adjusted to a target value, by pulses of a constant height and variable width. One polarity gives an increase in resistance; the other polarity gives a decrease. A short pulse applied after a longer pulse appears to have no effect. After each polarity change short pulses can again be used to make small adjustments. In a preferred embodiment longer and longer pulses are used until the resistance overshoots the target value. After overshooting the polarity is reversed and a second series of pulses is used to obtain a closer approach to the target. The resistive element comprises a resistive layer located between two electrodes, e.g. a matrix of amorphous silicon doped with boron containing V. One electrode is Cr and the other is V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.