Removing damage caused by plasma etching and high energy implantation using hydrogen
US5543336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1994 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Nov 25, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chamber 103 for introducing hydrogen without causing serious damage to a semiconductor wafer and a chamber 104 for eliminating the hydrogen introduced into the semiconductor wafer at relatively low temperature are installed at the succeeding stage of a plasma etching unit for effectively correcting the damage caused by plasma etching and ion implantation to a semiconductor substrate or an ion implanting unit. In order to introduce hydrogen into the semiconductor wafer without serious damage, a mixture of hydrocarbon gas and oxygen gas for accelerating the decomposition of the hydrocarbon gas is used for forming hydrogen radicals in a plasma and the hydrogen radicals are supplied to the semiconductor wafer at room temperature by a downstream system. The semiconductor wafer is heat-treated in an atmosphere of a vacuum or inactive gas in a temperature region of 200.degree.-500.degree. C. to eliminate the hydrogen introduced into the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.