Process of manufacturing a semiconductor device by filling a via hole in an interlayered film of the device with wiring metal
US5543357A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1994 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Dec 8, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a process for manufacturing a semiconductor device in which characteristics of an aluminum alloy film are prevented from deteriorating, when a titanium film is used as an under film and the aluminum alloy film is heated to fill a via hole therewith. Interlayered insulating film is formed on a first aluminum wire, and after the formation of a via hole which reaches the first aluminum wire, a titanium film and an aluminum alloy film are formed in turn by a sputtering process. Next, a silicon substrate is heated up to 450.degree. to 500.degree. C. to melt the aluminum alloy film, thereby filling the via hole therewith. In this case, the thickness of the titanium film is set to 10% or less of the thickness of the aluminum alloy film and at most 25 nm. In particular, in the case of the aluminum alloy film containing no silicon, the thickness of the titanium film is set to 5% or less of the thickness of the aluminum alloy film, whereby the deterioration of characteristics of the aluminum alloy film by titanium can be minimized, and the via hole can be surely filled therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.