Process for fabricating refractory-metal silicide layers in a semiconductor device
US5543362A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 1995 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Mar 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating refractory-metal silicide layers in a semiconductor device includes the formation of a composite gate electrode (54) and a buried contact structure (56). The composite gate electrode (54) includes a refractory-metal silicide layer (52) separated from a first polycrystalline silicon layer (38) by a diffusion barrier layer (46). The buried contact structure (56) includes a refractory-metal silicide layer (52) separated from a buried contact region (44) of a semiconductor substrate (30) by the diffusion barrier layer (46). The refractor-metal silicide layer (52) is formed by inverting a second polycrystalline silicon layer (48) to a refractory-metal silicide material while preventing the diffusion of refractory-metal atoms into underlying silicon regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.