Electrostatic discharge protection device for a semiconductor circuit
US5543649A · kind A · utility
6Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1995 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Mar 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
The present invention provides an electrostatic discharge protection device of a semiconductor memory device which comprises a gate and a bulk region of first conduction type which are commonly connected to a first power supply, a first diffused region of second conduction type formed in the bulk region, isolated from the gate by a dielectric and connected to the second power supply, and a second diffused region of second conduction type separated from the first diffused region in the bulk region, isolated from the gate by the dielectric and connected to the signal voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.