Thin-film measurement resistor and process for producing same
US5543775A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 1994 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Mar 3, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49163
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for producing a thin-film measurement resistor in which an electrically insulating work material with a low specific heat capacity serves as substrate material, a metal film, preferably platinum, being applied thereto. The lateral electrical resistor is then structured and trimmed by erosive after-treatment, and the metal film is passivated in a final process step. The resistor element reacts more quickly to changes in temperature, the cover layer is extremely resistant to corrosion, and the entire construction is simple to produce in that glass is used as a substrate material and is provided, before applying the metal film, with a bonding agent layer of Al.sub.2 O.sub.3 which is substantially thinner than the metal film. The metal film is then applied by evaporation and structured by sputter etching. Finally, the metal film is provided with a protective coat of SiO.sub.x.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.