Visible light laser diode and manufacturing method of visible light laser diode
US5544185A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1994 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Dec 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A visible light laser diode includes an etching stopping layer having a lower etching rate in an etching solution than a cladding layer, having a larger band gap energy in bulk than the band gap energy of the active layer, including a layer that stops etching, and having a band gap energy exceeding an energy corresponding to the oscillation wavelength of the visible light laser diode. Therefore, the cladding layer can be selectively etched with satisfactory controllability to a predetermined shape. After the etching process, even with a laminated etching stopping layer partly remaining in the cladding layer, the etching stopping layer does not absorb light emitted from the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.