Process for forming a semiconductor device having a metal-semiconductor compound
US5545574A · kind A · utility
39Cited by
9References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1995 |
| Grant date | Aug 13, 1996 |
| Priority date | — |
| Expiry date | May 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-semiconductor compound (72, 74, 76) is formed after a step that introduces nitrogen into regions (52, 54, 56) of the device (100). In one embodiment, a nitrogen-containing gas is exposed to surfaces (42, 44, 46) before forming a titanium layer (62) is deposited. A one-step anneal is performed to form titanium disilicide regions (72, 72, 76) that are in the C54 phase without thermal agglomeration or forming electrical shorts between the titanium disilicide regions (72, 74, 76).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.