Method for making a semiconductor device
US5547899A · kind A · utility
3Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1995 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Mar 10, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/916
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of making a semiconductor device, a p-type compound semiconductor layer containing zinc as a dopant impurity and including at least one transition metal element selected from the group consisting of Fe, V, Cr, Mn, Co, and Ni is grown on a second semiconductor layer, the at least one transition metal element inhibiting zinc from diffusing into the second semiconductor layer. A method of making a semiconductor laser includes growing the p-type compound semiconductor layer containing zinc as a cladding layer and the second layer is an undoped compound semiconductor active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.