Device for the protection of an integrated circuit against electrostatic discharges
US5548134A · kind A · utility
23Cited by
7References
32Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 27, 1993 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Apr 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
In a device for the protection of integrated circuits against electrostatic discharges, the protection structure comprises a thyristor with an N+ region connected to the ground, a P- substrate, a deep N- well forming a gate region, and a P+ region connected to an external connection pad to be protected. The gate region is connected by a low-value resistor (with a maximum value of a few ohms) to the pad. This resistor increases the current for which the thyristor gets triggered and eliminates certain risks of the destruction of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.