Field emission device comprising dielectric overlayer
US5548181A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N5/7491
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.