Semiconductor switching devices
US5550392A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/206
Abstract
A process for manufacturing a semiconductor switching device (such as a thyristor device) comprises: etching a face of a semiconductor body to provide islands and channels which define a mesa-contoured surface; diffusing dopant of a first conductivity type through said surface so that the lines of equal concentration of the dopant in said body follow substantially the mesa-contoured surface; and diffusing dopant of a second conductivity type into said islands to form p-n junctions with said dopant of a first conductivity type. The diffusion of said dopant of a first conductivity type is followed by an out-diffusion step so that the dopant concentration of said dopant of a first conductivity type is at a maximum at a depth below said surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.