Field emission device
US5550426A · kind A · utility
3Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1994 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | Jun 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An FED (10) utilizes a semiconductor junction to control the current flow (32) through an emission tip of the FED (10). The semiconductor junction is created between a conductive layer (12) and a doped semiconductor layer (14). The conductive layer (12) can be a metal or another doped semiconductor layer in order to form the semiconductor junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.