Binary stratified structures for periodically pumped semiconductor lasers
US5550854A · kind A · utility
6Cited by
3References
6Claims
0Family size
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Key dates
| Filing date | Nov 29, 1994 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | Nov 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser having a binary stratified structure of alternating sections of graded-index, separate confinement heterostructure (GRINSCH) and semi-insulating semiconductor formed in the direction of light propagation. The active region of the laser includes at least two GRINSCH sections upon a substrate and at least three filler sections sandwiching the at least two GRINSCH sections in an alternating fashion. An analysis of the practical limit on the minimum threshold current and the packaging problems of a semiconductor laser based on the binary stratified structure is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.