Method for forming high T.sub.c superconducting devices
US5552375A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1994 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Feb 7, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/704
Abstract
Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.