Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication
US5552624A · kind A · utility
19Cited by
11References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1993 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Jul 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
The electronic component comprises, topologically integrated within the same semiconductor structure (1), a first semiconductor area (12, 13, 3, 4, 20) capable of forming an insulated-gate field-effect transistor, and a second semiconductor area (12, 20, 18, 19, 11) capable of forming a lateral bipolar transistor, the two areas having a common semiconductor layer (20) in which the channel of the field-effect transistor is capable of being formed and/or the base current of the bipolar transistor is capable of flowing, the two areas being capable together of forming a structure capable of negative dynamic resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.