Superlattice avalance photodiode
US5552629A · kind A · utility
24Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 22, 1995 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Mar 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, which are laminated. Around a mesa side surface, a round shape p.sup.+ dopant to a depth below the field buffer layer, and then the cap layer is etched so that the p.sup.+ region is not in contact with the cap layer. This creates a distance of several .mu.m in-between the inner surface of the p.sup.+ region and the external surface of the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.