High thermal emissive semiconductor device package
US5552635A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1995 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Jan 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a high thermal emissive semiconductor device package which comprises a substrate having a plurality of external connection leads, a plurality of connection lands and wires between the leads and the lands; at least one semiconductor chips mounted on the substrate; bonding wires electrically connecting bonding pads of the chip and the connection lands of the substrate; a heat spreader with high thermal conductivity, which is attached to the upper surface of the bonding pads of the chip by insulating adhesives with good thermal conductivity; and a metal cap which is in contact with the upper surface of the heat spreader via thermal compounds and encapsulates the whole components by being sealed to the substrate. The high thermal emissive semiconductor device packages have advantageous that they efficiently emit heat generated during the operation of components and that they may be applied to various semiconductor devices which can be produced at low costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.