Magnetoresistance effect element with improved antiferromagnetic layer
US5552949A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1994 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Mar 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0<x<30) and a ferromagnetic film at least part of which is laminated with the antiferromagnetic film. With such an antiferromagnetic film, an exchange coupled film with a good exchange coupling characteristic and high corrosive resistance can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.