Process for producing single-crystal bulk zinc selenide
US5554219A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Jan 23, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When producing a single-crystal bulk ZnSe from a melt by a high-pressure melt technique in a vertical Bridgman (VB) furnace or a vertical gradient freezing (VGF) furnace, preliminarily grown polycrystalline ZnSe (which may be a crystal solely composed of twins) is used as a seed and, after melting the starting ZnSe material and part of the seed, a twin-free ZnSe bulk crystal is grown on the seed; alternatively, polycrystalline ZnSe is grown at the tip of the growing crystal and part of it is melted, followed by growing a single crystal on that polycrystal to produce a twin-free, high-purity ZnSe bulk crystal. In either way, the process assures that twin-free single crystals of bulk ZnSe can be produced with good reproducibility without adding dopants or using any materials that are difficult to obtain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.