Method of manufacturing a semiconductor device having a semiconductor body with field insulation regions formed by grooves filled with insulating material
US5554256A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1994 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Sep 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprising a semiconductor body (1) with field insulation regions (14) formed by grooves (10; 24) filled with an insulating material (13) is disclosed. The grooves (10; 24) are etched into the semiconductor body (1) with the use of an etching mask (9) formed on an auxiliary layer (6) provided on a surface (5) of the semiconductor body (1). The auxiliary layer (6) is removed from the portion (11) of the surface (5) situated next to the etching mask (9) before the grooves (10; 24) are etched into the semiconductor body (1), and the auxiliary layer (6) is removed from the edge (12) of the surface (5) situated below the etching mask (9) after the grooves (10; 24) have been etched into the semiconductor body. Furthermore, a layer (13) of the insulating material is deposited on the semiconductor body (1), whereby the grooves (10; 24) are filled and the edge (12) of the surface (5) situated below the etching mask (9) is covered. Then the semiconductor body is subjected to a treatment whereby material is taken off parallel to the surface (5) down to the auxiliary layer (6), and finally the remaining portion of the auxiliary layer (6) is remo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.