Method of forming passivation film
US5554418A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 27, 1994 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Sep 27, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.