Micro-bolometric infrared staring array
US5554849A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Jan 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/21
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A micro-bolometric infrared (IR) staring array is described. The active element in each pixel within a two-dimensional array is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode. Each diode in the array serves as both an IR energy detecting element and a switching element. Each diode in a given row of the IR pixel array to be sensed, or read, is driven at a constant voltage, rendering its IR response highly controllable in the forward biased operating curve of the diodes in the addressed row. Diodes not being driven are, due to their reverse bias, in their off state producing minute leakage current and thus make no significant contribution to the sensed current representing a given pixel's IR exposure. The row-addressed driven or active diodes are sensed column by column by sample and hold techniques to produce a two-dimensional IR pixel image of a target. This simplifies the geometries as well as the cell structures while increasing the fill ratio to greater than approximately fifty percent. Moreover, manufacturing yields are greatly improved because of the topologic and process simplicities and compatibility with standard integrated circui…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.