Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
US5554853A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 10, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Mar 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/057
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scheme for producing ions of a selected ion species and a selected ion energy comprising: an ion plasma source for generating an ion source plasma from a selected source gas and having an ion exit aperture; an extraction electrode for extracting and for accelerating ions from the exit aperture of the plasma source, the extraction electrode being positioned in the vicinity of the ion exit aperture of the ion plasma source, the ion source being biased at a potential relative to the extraction electrode to achieve a selected ion beam energy; a magnetic structure having pole faces that define a magnetic deflection gap therebetween and having an ion exit region where ions exit the magnetic deflection gap, the ion plasma source and the extraction electrode being positioned in the magnetic deflection gap so that when the magnetic structure is energized ions extracted from the plasma source corresponding to the selected species are deflected about an angular beam path trajectory of at least ninety degrees before extracted ions reach the ion exit region and exit the magnetic deflection gap. An improved scheme for implanting ions produced by the above-mentioned scheme is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.