Integrated transmit/receive switch/low noise amplifier with dissimilar semiconductor devices
US5554865A · kind A · utility
95Cited by
8References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01S2013/0254
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A T/R switch/LNA for a radar's active array antenna includes dissimilar semiconductor devices in a monolithic microwave integrated circuit (MMIC). The devices are selected to best meet the functional requirements of the T/R switch/LNA. In particular, the LNA is realized with a HEMT and the T/R switch is realized with HBTs. The dissimilar devices are adapted from first and second heterostructures that are arranged to be coplanar and separated by an isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.