Structure and method for metallization of semiconductor devices
US5554889A · kind A · utility
8Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Apr 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.