Liquid crystal display device having multilayer gate busline composed of metal oxide and semiconductor
US5555112A · kind A · utility
22Cited by
6References
19Claims
0Family size
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Key dates
| Filing date | Feb 9, 1994 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Feb 9, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a liquid crystal display substrate in which the pixel electrode is applied with a voltage through the drain and source of a thin-film transistor (TFT) that conducts by a voltage applied to the TFT gate electrode, this gate electrode and a busline connected to the gate electrode are formed as a multi-layered structure consisting of a gate layer and at least two layers of a gate insulation film and an amorphous silicon film. The multi-layered structure is formed by etching through a single mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.