Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material
US5555219A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1993 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Dec 16, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/499
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A ferroelectric material has hysteresis characteristics in the polarization--electric field relationship thereof, exhibits an antiferroelectric phase at room temperature, and carries out a structural phase transition from the antiferroelectric state to a ferroelectric phase with the application of an electric field thereto, and a phase transition electric field with which the antiferroelectric-to-ferroelectric phase transition is carried out is shifted to a lower electric field with the elevation of the temperature thereof, and a phase transition electric field with which a ferroelectric-to-antiferroelectric phase transition is carried out has a negative value. A semiconductor non-volatile memory, a rewritable optical recording medium, a highly integrated micro-displacement control device, and a shape memory device, each utilizing the above-mentioned ferroelectric material, are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.