Quantum well superluminescent diode
US5556795A · kind A · utility
1Cited by
22References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1994 |
| Grant date | Sep 17, 1996 |
| Priority date | — |
| Expiry date | Feb 25, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/042
Abstract
A quantum well is formed in the active region of a superluminescent diode by limiting the active region to a thickness on the order of the carrier deBroglie wavelength. Increased efficiency of recombination of electrons and holes due to the existence of the quantum well allows operation at threshold currents which are substantially proportional to cavity length. Variation in threshold current with temperature is also reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.