Elevated emitter for double poly BICMOS devices
US5557131A · kind A · utility
18Cited by
33References
31Claims
0Family size
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Inventor
Key dates
| Filing date | Jul 14, 1994 |
| Grant date | Sep 17, 1996 |
| Priority date | — |
| Expiry date | Jul 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with an elevated emitter structure. An elevation structure raises the BJT emitter above the plane of the base. The elevation structure increases travel distance between a heavily doped base contact region and the emitter and protects against encroachment without increasing the total surface area allocated to the BJT device. A spacer oxide separates the polysilicon base contact and the elevation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.