Dielectric isolated type semiconductor device
US5557134A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1994 |
| Grant date | Sep 17, 1996 |
| Priority date | — |
| Expiry date | Nov 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric isolated type semiconductor device which can achieve a reduction in crystalline defects by means of a simple production process is provided. High-concentration regions are formed as active regions on a surface portion of an islandish semiconductor region which is isolated from an adjacent semiconductor region by means of an isolation trench. According to a first aspect of the present invention, an N type crystalline defect suppression region doped at a high concentration and deeper than the high-concentration regions is formed over the entire surface of an adjacent semiconductor region. According to a second aspect of the present invention, a high-concentration N type crystalline defect suppression region is provided on a surface portion of a P type high-concentration region is formed with identical structure and by an identical production process. By means of these N type regions, crystalline defects are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.