Process tolerant, high-voltage, bi-level capacitance varactor diode

US5557140A · kind A · utility

Assignee

• Hughes Aircraft Company · US

Inventors

• Chanh Nguyen · Tualatin, US
• Michael Case · Los Altos Hills, US
• William W. HOOPER · Westlake Village, US
• Authi A. Narayanan · Thousand Oaks, US

Key dates

• Filing date: Apr 12, 1995
• Grant date: Sep 17, 1996
• Expiry date: Apr 12, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/64

Abstract

A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,>100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.