Method of doping, semiconductor device, and method of fabricating semiconductor device
US5557141A · kind A · utility
7Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1994 |
| Grant date | Sep 17, 1996 |
| Priority date | — |
| Expiry date | Mar 30, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.