Semiconductor device having a hollow around a gate electrode and a method for producing the same
US5559046A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1995 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Jun 26, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.