Method for producing native oxides on compound semiconductors
US5559058A · kind A · utility
5Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1994 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Nov 15, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a native oxide on a compound semiconductor material, comprising contacting the compound semiconductor material with an oxygen containing fluid, and pulsing a current between the compound semiconductor material the fluid, is presented. A "traveling oxide" can be produced when the oxygen containing fluid etches the native oxide. To obtain smooth oxides when the compound semiconductor material contains layers of different material, the oxide growth is monitored, and the pulse parameters changed in response to the monitoring of the oxide growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.