Photosensitive materials comprising fullerene
US5561026A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1993 |
| Grant date | Oct 1, 1996 |
| Priority date | — |
| Expiry date | Jun 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/167
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A photosensitive material comprising a photosensitive-group-containing fullerene such as a photosensitive material which is obtained by adding a photosensitive group to fullerene and/or a photosensitive material which is obtained by combining the fullerene with a photosensitive agent is provided. The photosensitive material according to the present invention has excellent properties as a new resist which is a photosensitive material suitable as a photolithographic resist for the production of semiconductors utilizing such light source as ultraviolet light, deep ultraviolet light, X-ray or electron beam and which meets the requirements for realization of a higher level of resolution and sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.