Method and apparatus for performing internal device structure analysis of a dual channel transistor by multiple-frequency Schubnikov-de Haas analysis
US5561305A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 16, 1994 |
| Grant date | Oct 1, 1996 |
| Priority date | — |
| Expiry date | Feb 16, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for finding internal charge flow distribution in a dual-channel field effect semiconductor device having at least two source terminals, two drain terminals, a control gate and two isolation gates. Electrical energy of different frequencies is applied to different ones of the source terminals for causing currents to flow in each of the channels between the source and drain terminals. Using the isolation gates to achieve channel pinch off, one of the drain terminals and one of the source terminals are selectively coupled to only one of the channels. A control signal is applied to the control gate for controlling the amount of the electrical energy conducting in each of the channels. Data is collected by measuring currents at the different frequencies at each of the drain terminals while a magnetic field perpendicular to the plane of the channels is varied. The data is subjected to a Schubnikov-de Haas analysis to find the amounts of source currents flowing in each of the channels and at each of the drain terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.