Storage electrode of DRAM cell
US5561310A · kind A · utility
35Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1995 |
| Grant date | Oct 1, 1996 |
| Priority date | — |
| Expiry date | Jan 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A storage electrode of a DRAM cell in a highly-integrated semiconductor device has, in order to secure the surface area thereof greater than that of a conventional tunnel-type storage electrode, an upper plate of storage electrode formed over a lower plate of storage electrode separated therefrom by a predetermined distance, while interposing bars of irregularly shapes formed of a conductive layer to electrically connect the upper and lower plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.