Large scale integrated circuit device
US5561326A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1995 |
| Grant date | Oct 1, 1996 |
| Priority date | — |
| Expiry date | Mar 30, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a barrier layer as an underlying layer for a wiring conductor layer. The barrier layer is formed of titanium oxide-titanium nitride or titanium nitride or composite layers of titanium, 2-titanium nitride and titanium nitride. The barrier layer may contain oxygen or carbon. A method of manufacturing an integrated circuit device includes steps of introducing a gas to the vicinity of a substrate disposed within a vacuum chamber, and forming a titanium oxide-titanium nitride thin film or titanium nitride film or the composite film by depositing titanium in vapor phase by using a cluster-type ion source while irradiating the substrate with nitrogen ions. A thin film forming apparatus comprises a cluster type ion source and a gas ion source. The cluster type ion source includes a vacuum chamber maintained at a predetermined vacuum level, a substrate disposed within the vacuum chamber, a gas introducing pipe for introducing gas to the vicinity of the substrate, a vapor generating source for ejecting a vapor of a material for deposition toward the substrate and producing vapor or cluster of the material, an ionizing electrode for ionizing a part of the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.