Plasma-CVD method and apparatus
US5562952A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1995 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Apr 4, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/515
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.