Method for forming rugged tungsten film and method for fabricating semiconductor device utilizing the same
US5563090A · kind A · utility
36Cited by
6References
16Claims
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Key dates
| Filing date | Apr 10, 1995 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Apr 10, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A DRAM cell capacitor having a high capacitance is obtained by forming a lower capacitor electrode of TiN and a roughened tungsten film on the TiN layer. A high dielectric constant film, such as tantalum pentaoxide, is then provided on the tungsten film and an upper capacitor electrode is deposited on the dielectric film. A method of forming the roughened tungsten film includes the step of depositing tungsten on the TiN layer at a temperature in the range of 200.degree.-650.degree. C.
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