Semiconductor ridge waveguide laser with lateral current injection
US5563902A · kind A · utility
22Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1995 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Apr 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.