Method for the production of a reflector

US5565052A · kind A · utility

Assignees

• INDUSTRIEANLAGEN-BETRIEBSGESELLSCHAFT MBH · DE
• Daimler-Benz Aerospace AG · DE

Inventors

• Ulrich Papenburg · Egmating, DE
• Ernst Blenninger · Munich, DE
• Peter Goedtke · Munich, DE
• Michael Deyerler · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Sep 2, 1994
• Grant date: Oct 15, 1996
• Expiry date: Sep 2, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T156/1064
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.