Bismuth-substituted rare earth iron garnet single crystal
US5565131A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1995 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | Jan 5, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/093
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A bismuth-substituted rare earth iron garnet single crystal film is represented by a general equation Tb.sub.x Lu.sub.y Bi.sub.3-x-y Fe.sub.5-z Al.sub.z O.sub.12 (where 0.09.ltoreq.y/x.ltoreq.0.23, 1.40.ltoreq.x+y.ltoreq.1.70, 0.20.ltoreq.z.ltoreq.0.38) grown on a non-magnetic garnet substrate (CaGd).sub.3 (MgZrGa).sub.5 O.sub.12 having a lattice constant of 12.490 .ANG.-12.500 .ANG. by a liquid phase epitaxial method. The bithmus-substituted rare earth iron garnet single crystal film satisfies three conditions that (1) the Faraday effect is large, i.e., the film thickness required for the Faraday rotator at a wavelength of 1.55 .mu.m is 450 .mu.m or less, (2) the saturated magnetic field is 800 (Oe) or less, and (3) the temperature coefficient .alpha. is 0.07 deg/.degree.C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.