Method of making mask pattern data and process for manufacturing the mask
US5565285A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1995 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | Sep 27, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/84
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Pattern data of a phase shift mask can be inspected: (101) by separating and laying out pattern data of a phase shift mask in an actual pattern data layer, an auxiliary pattern data layer and a phase shift pattern data layer; (102) by inspecting and correcting only the data of the actual pattern of the actual pattern data layer; (103) by making data of an estimated pattern estimated to be transferred to a semiconductor wafer from the data of the synthetic data of the correct actual pattern data, the auxiliary pattern data and the phase shift pattern data, which are inspected and corrected; and (104) by comparing the estimated pattern data and the actual pattern data to inspect the data of the auxiliary pattern and the phase shift pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.