Semiconductor structure having island forming grooves
US5565697A · kind A · utility
151Cited by
38References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.