Semiconductor device comprising composite barrier layer
US5565708A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1995 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | May 15, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising conductors electrically connected through a contact hole interlayer insulation layer with a trilayer barrier layer comprising a titanium silicide layer, titanium silicide layer formed on the titanium silicide by collimation sputtering, and a thermally nitrided titanium formed on the titanium nitride layer. The use of a trilayer barrier layer enables through the capacity of the collimation sputtering apparatus to be increased, prevents particles from occurring, and formation of a low resistance electrical connection between conductors, in addition to preventing diffusion from the titanium nitride layer and the second titanium layer to the thermally nitrided titanium layer, and between conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.