Semiconductor device
US5565709A · kind A · utility
19Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1995 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | Nov 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.